power transistors 1 publication date: november 2004 sjd00267ced 2sd2420, 2SD2420A silicon npn triple diffusion planar type darlington for power amplification complementary to 2sb1623, 2sb1623a features ? high forward current transfer ratio h fe ? dielectric breakdown voltage of the package: > 5 kv absolute maximum ratings t c = 25 c electrical characteristics t a = 25 c 3 c parameter symbol rating unit collector-base voltage 2sd2420 v cbo 60 v (emitter open) 2SD2420A 80 collector-emitter voltage 2sd2420 v ceo 60 v (base open) 2SD2420A 80 emitter-base voltage (collector open) v ebo 5v collector current i c 4a peak collector current i cp 8a collector power p c 30 w dissipation t a = 25 c 2.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 1.4 0.2 1.6 0.2 0.8 0.1 0.55 0.15 2.54 0.30 5.08 0.50 123 2.6 0.1 2.9 0.2 4.6 0.2 3.2 0.1 3.0 0.5 9.9 0.3 15.0 0.5 13.7 0.2 4.2 0.2 solder dip unit: mm 1: base 2: collector 3: emitter to-220d-a1 package internal connection b c e parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 30 ma, i b = 060v base-emitter voltage v be v ce = 3 v, i c = 3 a 2.5 v collector-base cutoff 2sd2420 i cbo v cb = 60 v, i e = 0 200 a current (emitter open) 2SD2420A v cb = 80 v, i e = 0 200 collector-emitter cutoff 2sd2420 i ceo v ce = 30 v, i b = 0 500 a current (base open) 2SD2420A v ce = 40 v, i b = 0 500 emitter-base cutoff current (collector open) i ebo v eb = 5 v, i c = 02ma forward current transfer ratio h fe1 v ce = 3 v, i c = 0.5 a 1 000 ? h fe2 * v ce = 3 v, i c = 3 a 2 000 10 000 collector-emitter saturation voltage v ce(sat)1 i c = 3 a, i b = 12 ma 2.0 v v ce(sat)2 i c = 5 a, i b = 20 ma 4.0 transition frequency f t v ce = 10 v, i c = 0.5 a, f = 1 mhz 20 mhz turn-on time t on i c = 3 a, i b1 = 12 ma, i b2 = ? 12 ma 0.5 s storage time t stg v cc = 50 v 4.0 s fall time t f 1.0 s note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank q p h fe2 2 000 to 5 000 4 000 to 10 000
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